http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
Outgoing Links
| Predicate | Object |
|---|---|
| concordantIPC | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-18 |
| level | 10^^<http://www.w3.org/2001/XMLSchema#integer> |
| symbol | H01L21/18 |
| modified | 2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| title | Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBVcompounds with or without impurities, e.g. doping materials |
| type | http://data.epo.org/linked-data/def/cpc/SubGroup |
| broader | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-04 |
Incoming Links
Total number of triples: 10000.