http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100695500-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2005-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100695500-B1 |
| titleOfInvention | Method for manufacturing a semiconductor device having a top round recess pattern |
| abstract | The present invention is to provide a method of manufacturing a semiconductor device for implementing the top portion of the recess region in a round shape, the present invention provides an etching barrier pattern in which a sacrificial film and an amorphous carbon hard mask are sequentially stacked on a semiconductor substrate. Forming an undercut by partially etching the exposed sidewalls of the sacrificial layer of the etching barrier pattern; forming a recess by etching the semiconductor substrate to a predetermined depth using an etching barrier with the etching barrier; Rounding the top corner of the recess below the undercut through, The present invention removes the stress point of the leakage current to improve the gate oxide film reliability, has the effect of high integration and yield of the device . |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8859489-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9410964-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8058235-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8058128-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7879726-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9395374-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10160992-B2 |
| priorityDate | 2005-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.