| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-808 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2009-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df8d4b9d8f1925ff689d409c808fb907
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bbce926195aa5fba537c9fee4308fe3 |
| publicationDate |
2010-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201021099-A |
| titleOfInvention |
Method of forming aluminum-doped metal carbonitride gate electrodes |
| abstract |
A method for forming an aluminum-doped metal (tantalum or titanium) carbonitride gate electrode for a semiconductor device is described. The method includes providing a substrate containing a dielectric layer thereon, and forming the gate electrode on the dielectric layer in the absence of plasma. The gate electrode is formed by depositing a metal carbonitride film, and adsorbing an atomic layer of an aluminum precursor on the metal carbonitride film. The steps of depositing and adsorbing may be repeated a desired number of times until the aluminum-doped metal carbonitride gate electrode has a desired thickness. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I770857-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11456177-B2 |
| priorityDate |
2008-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |