http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060051663-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2005-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c99406563b86108ef64b5ff6a62e8f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9e90793c146ba4e8b0c59ee275c6155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb86c5ef7ed264ac6d183b6435e0a9db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b3585242cc6c73e50682bdae2a6a906 |
| publicationDate | 2006-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060051663-A |
| titleOfInvention | Semiconductor devices |
| abstract | A semiconductor device of the present invention includes a gate electrode provided through a gate insulating film on a semiconductor substrate, a metal layer provided on the gate electrode, and a gate having a diffusion layer acting as a source or a drain provided in the substrate so as to insert the gate electrode. An insulating field effect transistor, a first barrier layer formed on the diffusion layer and the sidewalls of the transistor, a first insulating layer provided on the first barrier layer, a second layer formed on the metal layer and the first insulating layer A second barrier film, a groove having a first width and opening in the second barrier film, extending in a first direction, a second insulating layer provided on the second barrier film, and passing through the second insulating layer; The bottom portion has a bottom portion in the barrier film, and the bottom portion has a second width that is larger than the first width in a second direction crossing the first direction. An upper portion of the contact hole, a contact hole formed in the diffusion layer through the first insulating layer and the first barrier layer through the groove from the upper portion of the contact hole, and having an upper surface having the first width in the second direction; And a contact plug provided in an upper portion of the contact hole and a lower portion of the contact hole.n n n n Gate insulating film, gate electrode, diffusion layer, barrier film, insulating layer, contact hole, contact plug |
| priorityDate | 2004-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578708 |
Total number of triples: 23.