| abstract |
This invention relates to a groove gate field-effect transistor and a method of manufacturing the same, which can effectively suppress the short-channel effect in a shallow source-drain junction with low resistance and in easy processes. In a method of manufacturing a groove gate field-effect transistor 100A of a structure, an impurity introduced layer 13, which is used as a source or a drain, is formed in a semiconductor substrate 1. By introducing impurities in the substrate 1, a groove 15 is bored in the layer 13. A gate insulating film 5 is formed on the bottom of the groove 15, and a gate G is formed in such a way as to embed the groove 15 after the impurities are introduced into the substrate 1, and it is subjected to laser annealing for activating the impurities prior to the gate G formation. |