http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101036771-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28097 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4975 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2007-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101036771-B1 |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | It is to provide a semiconductor device having excellent device characteristics and reliability, in which the V th values of the nMOS transistors and the pMOS transistors are controlled to values necessary for low power devices. The semiconductor device includes a pMOS transistor and an nMOS transistor formed by using an SOI substrate. The pMOS transistor is a fully depleted MOS transistor having, as the silicide region 1, a first gate electrode containing one type of crystal phase selected from the group consisting of a WSi 2 crystal phase, a MoSi 2 crystal phase, a NiSi crystal phase, and a NiSi 2 crystal phase. The nMOS transistor is a fully depleted MOS transistor including, as silicide region 2, a crystal phase of one kind selected from the group consisting of a PtSi crystal phase, a Pt 2 Si crystal phase, an IrSi crystal phase, a Ni 2 Si crystal phase, and a Ni 3 Si crystal phase. n n SOI substrate, silicide region, fully depleted MOS transistor, pMOS transistor, nMOS transistor, crystal phase |
| priorityDate | 2006-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.