| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3b6e46872fdbcf5b14a3e39c711e8f97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3891
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-723
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-721 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-6268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02159
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-58092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-6455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C22C27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2002-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af711d558b6edb01318f0b187aa6beab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15c1bf37e61e4832a9276bb873423a58 |
| publicationDate |
2004-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-574390-B |
| titleOfInvention |
Hafnium silicide target for forming gate oxide film and method for preparation thereof |
| abstract |
A hafnium silicide target is provided. The target is used for forming a gate oxide film composed of HfSi1.02-2.00. The target material is superior in workability and embrittlement resistance and is suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film. A method of manufacturing the above referenced hafnium silicide target is also provided. |
| priorityDate |
2001-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |