| abstract |
The present invention provides a method of fabricating a semiconductor device. Moreover, the present invention provides a semiconductor device obtainable by the method, and a dispersion usable in the method. The method of the present invention for fabricating a semiconductor device (500a) comprises the following steps (a) to (c), and the crystal orientation of the first dopant implant layer (52) is a semiconductor layer or a substrate formed of a semiconductor element ( 10) the crystal orientation is the same: (a) applying a dispersion containing the doped particles to a specific portion of the layer or substrate, (b) drying the applied dispersion to become an unsintered dopant injection layer, and (c) by irradiating the unsintered dopant implant layer with light, using a p-type or n-type dopant to dope a specific portion of the layer or substrate while sintering the unsintered dopant implant layer A dopant injection layer integrated with the layer or substrate. |