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filingDate 2012-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2012-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2012173064-A1
titleOfInvention Method for producing amorphous oxide thin film and thin film transistor
abstract A method for producing an amorphous oxide thin film, said method comprising: a pre-treatment step for, in a first oxide precursor film containing an organic component and In, selectively changing the binding state of the organic component at a temperature lower than the pyrolysis temperature of the organic component to give a second oxide precursor film, wherein, when said second oxide precursor film is analyzed by Fourier transform infrared spectroscopy to give an infrared absorption spectrum and an infrared wave number range of 1380-1520cm -1 inclusive in said infrared absorption spectrum is divided into an infrared wave number range of 1380-1450cm -1 inclusive and an infrared wave number range of more than 1450 cm -1 and not more than 1520cm -1 , a peak positioned within the infrared wave number range of 1380-1450cm -1 inclusive attains the maximum value in the infrared absorption spectrum within an infrared wave number range of 1350-1750cm -1 inclusive; and a post-treatment step for removing the aforesaid organic component remaining in the second oxide precursor film and thus transferring the second oxide precursor film into an amorphous oxide thin film containing the In.
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