Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98d52a9a4866ed80e4d24a596b6b8e8d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_492eee9d6eed83a522250471dd686c98 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b3c48d8c26337bacde0ea0817487cc9f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9d4e3c69bb55a0a2f325334d906079c5 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14698 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2012-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_715495463c0d7e703feffd4c7d0f48c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77232d5a03ad8b5c6a78d8fa4763fb9f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c8b3db064b246025f082dd6407c02a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba3e74eb5fbab60aa5f167c734a70cac |
publicationDate |
2012-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2012173064-A1 |
titleOfInvention |
Method for producing amorphous oxide thin film and thin film transistor |
abstract |
A method for producing an amorphous oxide thin film, said method comprising: a pre-treatment step for, in a first oxide precursor film containing an organic component and In, selectively changing the binding state of the organic component at a temperature lower than the pyrolysis temperature of the organic component to give a second oxide precursor film, wherein, when said second oxide precursor film is analyzed by Fourier transform infrared spectroscopy to give an infrared absorption spectrum and an infrared wave number range of 1380-1520cm -1 inclusive in said infrared absorption spectrum is divided into an infrared wave number range of 1380-1450cm -1 inclusive and an infrared wave number range of more than 1450 cm -1 and not more than 1520cm -1 , a peak positioned within the infrared wave number range of 1380-1450cm -1 inclusive attains the maximum value in the infrared absorption spectrum within an infrared wave number range of 1350-1750cm -1 inclusive; and a post-treatment step for removing the aforesaid organic component remaining in the second oxide precursor film and thus transferring the second oxide precursor film into an amorphous oxide thin film containing the In. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015070211-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015045712-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103911159-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103911159-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101894162-B1 |
priorityDate |
2011-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |