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publicationDate 2012-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2012501093-A
titleOfInvention Method for producing metal carbonitride gate electrode doped with aluminum
abstract A method for making aluminum doped metal (tantalum or titanium) carbonitride gate electrodes for semiconductor devices is described. The method includes the steps of providing a substrate having a dielectric layer thereon, and forming the gate electrode on the dielectric layer in the absence of plasma. The gate electrode is produced by a deposition process for depositing a metal carbonitride and an adsorption process for adsorbing an atomic layer of an aluminum precursor on the metal carbonitride. The deposition step and the adsorption step may be repeated as many times as necessary until the aluminum-doped metal carbonitride gate electrode has a desired thickness.
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