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publicationDate 2013-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2013001587-A1
titleOfInvention High electron mobility transistors and methods of manufacturing the same
abstract High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain.
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