| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bac0c30db00af5e091ed87194e87cd38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4903
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7781 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0328 |
| filingDate |
2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c78014ecfeded29ec3d71253cd94e8e |
| publicationDate |
2013-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8586994-B2 |
| titleOfInvention |
Semiconductor device |
| abstract |
A semiconductor device includes: an electron-transit layer made of a semiconductor, the electron-transit layer having a first band gap; an electron-supply layer disposed on the electron-transit layer, the electron-supply layer being made of a semiconductor having a second band gap that is wider than the first band gap; a barrier-forming layer disposed on the electron-supply layer, the barrier-forming layer being made of a semiconductor having a third band gap that is narrower than the second band gap; an upper-channel layer disposed on the barrier-forming layer, the upper-channel layer being made of a semiconductor doped with an impurity; a side-surface of the barrier-forming layer and the upper-channel layer formed by partly removing the barrier-forming layer and the upper-channel layer; an insulating-film disposed on the side-surface; a gate-electrode disposed on the insulating-film; a source-electrode connected to the upper-channel layer; and a drain-electrode connected to the electron-supply layer or the electron-transit layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11764278-B2 |
| priorityDate |
2011-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |