http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100781549-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2006-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15de3d66bc16c3e4f4888071d10ff50a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_807b9fe706a66b6e2206317eb1482bf2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62641d932dd51c0f80495d7341d9d75f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e01e7eded7282fe8f257aac6f956b45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8046d3fb3eca3703ca89d37e777571c |
| publicationDate | 2007-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100781549-B1 |
| titleOfInvention | Method for manufacturing a semiconductor integrated circuit device and semiconductor integrated circuit device manufactured thereby |
| abstract | A semiconductor integrated circuit device is provided. In a semiconductor integrated circuit device, an insulating film and a conductive film are formed on a semiconductor substrate, a capping film, an epitaxial blocking film and a sacrificial hard mask film are formed on the conductive film, a photoresist pattern is formed on the sacrificial hard mask film, and a photoresist is formed. The sacrificial hard mask film, the epitaxial blocking film and the capping film are patterned by using the pattern as an etch mask to form the sacrificial hard mask film pattern, the epitaxial blocking film pattern and the capping film pattern, and the sacrificial hard mask film pattern is used as the etching mask. Patterning the film and the insulating film to form a gate and a gate insulating film, conformally forming a spacer insulating film on the semiconductor substrate, and anisotropically etching the spacer insulating film to form a spacer, the etching is performed until the epitaxial blocking film pattern is exposed And expose the peninsula by performing selective epitaxial growth on the semiconductor substrate. Forming an epitaxial layer raised to a substrate, and includes forming the protuberant proceeds to the ion implantation process on the semiconductor substrate source / drain regions. |
| priorityDate | 2006-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.