| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0f26a9c2efad3ae086a108f3c04b57d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
1995-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1996-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c40e3b13f9ba0c9837382eee009c097b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65bebc6acc04ec8a4d4e922b03bbab28 |
| publicationDate |
1996-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5578855-A |
| titleOfInvention |
High-voltage CMOS transistors on a standard CMOS wafer |
| abstract |
A low-voltage 0.8-micron CMOS process is modified by implanting arsenic or phosphorus during epitaxy in a p-type substrate starting material to increase the depth of selected n-well areas for the purpose of producing high-voltage transistors on the same substrate in the same CMOS process. Implanting boron in a p-field extension area in a manner which minimizes the dopant in the adjacent field oxide achieves a similar result. That is, breakdown and punch-through voltages are increased. Together, these make CMOS transistors which operate at a higher voltage range than either innovation alone. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6995068-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6451640-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6194766-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11239312-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6225662-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008099832-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7400529-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8106442-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5889315-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007206415-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009142705-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5789786-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9214457-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6133077-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8008709-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013072004-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10770543-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005194647-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0849801-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6093585-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0849801-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7091535-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-19990056329-A |
| priorityDate |
1994-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |