| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d40a7125ded45f5e2467a3373e6608d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d56e43268644129be87dc9cf12ac9bd4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_989912cd608af42cbd047118d6bd0cfa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b862aab370608338d2b5ddd47c68285f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d34f537cf9f0bd25f4c54114dcfb5b42 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2012-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe6a28d7ad833c568522aa9c9376eae2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bb9fcbae53f2a5a38c0b7d6dc547714
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd443df39e8bc9008f7f894479ece5c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c99a894156fe9a3d3c353116cb5de6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0db8dce4e62a17262ed96b3f76ed3ddc |
| publicationDate |
2014-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8815688-B2 |
| titleOfInvention |
Method of manufacturing power device |
| abstract |
A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11289594-B2 |
| priorityDate |
2011-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |