http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100734507-B1

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filingDate 2006-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2007-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100734507-B1
titleOfInvention Structure to prevent current leakage of high voltage devices
abstract A structure for preventing current leakage of a high voltage device is provided. This structure includes a conductive layer located below the conductive line terminating over the region with the high voltage element and shielding the features below it. This conductive layer has a width wider than the width of the conductive line.n n n n Leakage, Parasitic Transistor, Shallow Trench Isolation, Shielding Layer, Guard Ring
priorityDate 2005-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.