| abstract |
In order to set a switch circuit device at 5GHz, a shunt FET is required. However, it is necessary to ensure that a separation distance about 20μm for these FETs with gate electrodes neighboring so as to promote the isolation. There is provided a impurity area with high concentration among the gate electrode of FET and electrode pad, other FET neighboring wire arrangement, gate metal layer and impurity area such that the expansion of depletion layer is suppressed. An oxide film formed on the source drain area is used to promote the accuracy of mask alignment of FET. In this invention, the fundamental property of FET is enhanced even the gate width is reduced. Having the similar property, the gate width is shrunk and the separation distance between FET(s) can be reduced, the switch of 5GHz having improved isolation is achieved. |