| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
1999-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_855176b817a3a784301a68b931c38ada
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd14db43dd4caebb08c6742412e869e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e832ea299dae463613056d48e6a2e396 |
| publicationDate |
2000-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20000011703-A |
| titleOfInvention |
A method for gate-stack formation including a high-k dielectric |
| abstract |
A gate stack 104 is provided that includes a gate dielectric with reduced effective electrical thickness. A thin (eg, 15 μs or less) silicon dioxide layer is formed on the substrate 102. The silicon dioxide layer is subjected to remote plasma nitridation to produce a silicon-oxynitride layer 106 that is oxidation resistant. An oxygen containing high-K dielectric 108 is formed over layer 106 without the need to further oxidize silicon-oxynitride layer 106. A gate electrode 110 is then formed over the high-K dielectric layer 108. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100721203-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100470834-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100860471-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210053241-A |
| priorityDate |
1998-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |