http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100640968-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-928 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2004-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100640968-B1 |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | The present invention relates to a method for manufacturing a semiconductor device capable of preventing copper contamination, and the method for manufacturing a semiconductor device includes forming a gate electrode on a substrate, and depositing a first oxide film on the entire surface of the substrate including the gate electrode. Removing the oxide film on the back surface of the substrate, depositing a nitride film on the back surface of the substrate while depositing a nitride film on the first oxide film, and depositing a second oxide film on the nitride film; And removing the oxide film on the rear surface of the substrate, and selectively removing the second oxide film, the nitride film, and the first oxide film to form a spacer on the side of the gate electrode.n n n n Copper damascene, copper diffusion, nitride, etch stop, copper contamination |
| priorityDate | 2004-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.