| abstract |
Disclosed is a method for fabricating a semiconductor device using high dielectric material. The method comprises the steps of: forming an Hf thin film on a silicon substrate; oxidizing the Hf thin film by performing an oxidizing process; and performing an annealing process after the oxidizing process, thereby forming a gate oxide film comprising an HfSixOy thin film and an HfO2 thin film on the silicon substrate, in which ""X"" is 0.4 to 0.6 and ""Y"" is 1.5 to 2.5. Therefore, since a high dielectric material HfO2, which is thicker than SiO2, is used, leakage current caused by direct tunneling of SiO2 can be prevented. |