| abstract |
A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometres, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometres. Such a semiconductor may be elongated. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductor, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. |