http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090133129-A

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filingDate 2008-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cb795a2828ffab2eab10c09fea45669
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publicationDate 2009-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20090133129-A
titleOfInvention How to compensate for process-induced performance fluctuations in MOSF integrated circuits
abstract An automated method for compensating for process-induced variations in threshold voltage and drive current in a MOSFET integrated circuit is disclosed. The first step of the method is to select a transistor to analyze from the array. The method loops between transistors of the desired array. Next, the design of the selected transistor is analyzed, which includes determining the threshold voltage variation induced by the proximity of the layout and determining the drive current variation induced by the proximity of the layout. The method then attempts to compensate for any determined variation by changing the length of the transistor gate. The method may further comprise identifying any lack of compensation by changing the contact interval.
priorityDate 2007-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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