patent/US-6380014-B1

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6380014-B1

Outgoing Links

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filingDate	1999-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2002-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42d0fab45dffbb7aafd09036ca629611 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8112847430d77da2930b6d6584988538
publicationDate	2002-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-6380014-B1
titleOfInvention	Manufacture method of semiconductor device with suppressed impurity diffusion from gate electrode
abstract	A method of manufacturing a semiconductor device includes the step of forming a MOS transistor structure on a semiconductor substrate, the MOS transistor structure having an insulated gate electrode. The method further includes the step of depositing a silicon nitride film covering the insulated gate electrode over the semiconductor substrate by single wafer processing type thermal CVD at a substrate temperature of 500° to 800° C.
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priorityDate	1996-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 86.