http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100331127-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 1994-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100331127-B1 |
| titleOfInvention | High Voltage CMOS Transistors for Standard CMOS Processes |
| abstract | The low voltage 0.8-micron CMOS process is an arsenic during epitaxy process in the starting material of the P-type substrate 14 to increase the depth of the n-well region 16 selected for fabricating a high voltage transistor on the same substrate with the same CMOS process. Or by injecting phosphorus. Injecting boron into the P-field extension site 18 through a partially formed field oxide insulator such that diffusion of boron beyond the range of the P-field extension site 18 results in similar results. That is, the breakdown and punch through voltages are increased. At the same time, they allow CMOS transistors to operate at higher voltages than just innovation. |
| priorityDate | 1994-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.