| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2008-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff824c2353a62b38600092f517857058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6eeebb99e7c1207b7cce6647774dee1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e55aefd56b1221096ced80ce46dcee9 |
| publicationDate |
2009-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009104741-A1 |
| titleOfInvention |
Methods of fabricating semiconductor devices using a plasma process with non-silane gas including deuterium |
| abstract |
Semiconductor devices are fabricated using a plasma process with a non-silane gas that includes deuterium, and which may result in improved device reliability and/or other improved device operational characteristics. One such method can include forming a gate oxide layer on a transistor region, which is defined on a substrate, and forming a gate electrode on the gate oxide layer. An etch stop layer is formed on the gate oxide layer and the gate electrode. A plasma process is performed on the interface between the gate oxide layer and the substrate using a non-silane treatment gas including deuterium. An interlayer dielectric layer is formed on the etch stop layer. A bottom metal line is formed on the interlayer dielectric layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015364559-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8445969-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9711411-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106571303-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013270651-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9218974-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012273894-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9508814-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102709186-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109585552-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017111826-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152262-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014084379-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022028984-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532748-B2 |
| priorityDate |
2007-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |