http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176
Outgoing Links
| Predicate | Object |
|---|---|
| concordantIPC | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| level | 16^^<http://www.w3.org/2001/XMLSchema#integer> |
| symbol | H01L21/28176 |
| modified | 2013-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| title | Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor |
| type | http://data.epo.org/linked-data/def/cpc/SubGroup |
| broader | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28167 |
Incoming Links
Total number of triples: 1809.