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filingDate 2016-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c27de9ab70ca903e3213ff7df2df844
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publicationDate 2017-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2017110551-A1
titleOfInvention Atomic layer deposition methods and structures thereof
abstract A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate and a work-function metal layer is deposited over the gate dielectric layer. Thereafter, a fluorine-based treatment of the work-function metal layer is performed, where the fluorine-based treatment removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited over the treated work-function metal layer.
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