http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11232990-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4933 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2020-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_802bf12cdac373db4008eaa70da57851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de41ea065dfc15c2e0f0caa91d38ea6c |
| publicationDate | 2022-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-11232990-B2 |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | A semiconductor device includes a semiconductor substrate, an insulating layer, a semiconductor layers and a silicide layer. The insulating layer is formed on the semiconductor substrate. The semiconductor layer is formed on the insulating layer and includes a polycrystalline silicon. The silicide layer is formed on the semiconductor layer. The semiconductor layer has a first semiconductor part and a second semiconductor part. The first semiconductor part includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type. The second semiconductor part is adjacent the second semiconductor region. In a width direction of the first semiconductor part, a second length of the second semiconductor part is greater than a first length of the first semiconductor part. A distance between the first and second semiconductor regions is 100 nm or more in an extension direction in which the first semiconductor region extends. |
| priorityDate | 2020-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.