| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4941
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ff0d7ceea75de309c87dbf6ca3ebfad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9f24bc708b1b28dc8709aaab3d2f171 |
| publicationDate |
2013-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201304012-A |
| titleOfInvention |
Plasma nitriding treatment method, plasma nitriding treatment device, and manufacturing method of semiconductor device |
| abstract |
An object of the present invention is to selectively form a nitride film. The solution is to supply a nitrogen-containing gas to the processing vessel (2), set the pressure in the processing vessel (2) to a range of 133 Pa or more and 1333 Pa or less, and generate a nitrogen-containing plasma in the processing vessel (2). The surface (100 Ba) of the first portion (100A) containing tungsten is selectively nitrided by the nitrogen-containing plasma without nitriding the surface (100 Ba) of the second portion (100B) containing ruthenium, and is first The surface (100Aa) of the portion (100A) forms a tungsten nitride film (107). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I650798-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10868133-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10461169-B2 |
| priorityDate |
2011-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |