| abstract |
In an embodiment, a device includes: a gate dielectric over the substrate; a gate electrode over the gate dielectric, the gate electrode including: a work function adjustment layer over the gate dielectric; a glue layer over the work function adjustment layer a filling layer overlying the glue layer; and a void defined by an inner surface of at least one of the filling layer, the glue layer and the work function adjusting layer, the material of the gate electrode at the inner surface including the work function adjusting element. Embodiments of the present application also relate to semiconductor devices and methods of forming the same. |