| abstract |
This invention is aimed to restore defects of the gate insulating film which has an extremely small thickness of < 5 nm (equivalent to silicon dioxide) of an MISFET, in which a metal gate electrode is formed on the gate insulating film without oxidizing the metal gate electrode. After a W film 11A composed of a gate electrode material is formed on a gate insulating film 9A, which is formed on the main surface of a single-crystal silicon substrate 1 and has a thickness of < 5 nm (equivalent to silicon dioxide), the defects of the film 9A immediately below the W film 11A are restored by heat-treating the substrate 1 in the atmosphere of a mixed gas of moisture and hydrogen, which is prepared by adjusting the moisture/ hydrogen ratio, in such a way that the W film 11A is not oxidized substantially, but the silicon is oxidized. |