http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101483861-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2636 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate | 2013-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101483861-B1 |
| titleOfInvention | Heat treatment method and heat treatment apparatus |
| abstract | [PROBLEMS] A heat treatment method and a heat treatment apparatus capable of promoting crystallization of a high-k film and improving interfacial characteristics of a high-k film. A surface of a semiconductor wafer on which a gate of a high-permittivity film is formed is irradiated with flash light, and the surface is heated to a target temperature T2 in a short period of time to promote crystallization of the high-permittivity film while suppressing growth of the underlying silicon dioxide film . Subsequently, the semiconductor wafer after the flash heating is irradiated with light from a halogen lamp to maintain its temperature at the annealing temperature T3. The annealing process after the flash heating is performed in an atmosphere of a mixed gas of hydrogen gas and nitrogen gas. By annealing the semiconductor wafer in an atmosphere of a hydrogen-nitrogen mixed gas, defects existing near the interface of the high-permittivity film can be eliminated by hydrogen termination, and the interfacial characteristics of the high-permittivity film can be improved. |
| priorityDate | 2012-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 69.