| abstract |
The present invention relates to a dielectric constant gate insulating layer forming a Schottky contact or a Schottky-like region together with a high substrate, a device for regulating a current flow of a source and / or a drain, and a manufacturing method thereof. In one aspect, the gate insulating layer has a higher dielectric constant than silicon. As another aspect, the current regulation device becomes a MOSFET device, optionally a two-dimensional P-type or N-type MOSFET, and may have several directions. In another aspect, the source and / or drain may be partially or entirely composed of a silicide. [Selection diagram] FIG. |