| abstract |
A semiconductor device with different gate structure configurations and a manufacturing method thereof are provided. The semiconductor device includes a fin structure disposed on the substrate and first and second gate structures on the fin structure. The first and second gate structures include first and second interface oxide layers, respectively, first and second high-k gate dielectric layers disposed on the first and second interface oxide layers, respectively, and First and second dopant control layers on the first and second high-k gate dielectric layers. The second dopant control layer has a greater silicon to metal atomic concentration ratio than the first dopant control layer. The semiconductor further includes first and second work function metal layers respectively disposed on the first and second dopant control layers, and first and second gate electrodes respectively disposed on the first and second work function metal layers Metal filling layer. |