http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
Outgoing Links
| Predicate | Object |
|---|---|
| concordantIPC | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| level | 14^^<http://www.w3.org/2001/XMLSchema#integer> |
| symbol | H01L29/42364 |
| modified | 2015-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| title | Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity |
| type | http://data.epo.org/linked-data/def/cpc/SubGroup |
| broader | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4232 |
Incoming Links
Total number of triples: 4404.