| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-931
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 |
| filingDate |
2013-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5083511aeef16853618b44808fd70f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63376a30af6b08bf134ff100cf29920c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83cdd79461d94f7dd4d37cb292e9fb19 |
| publicationDate |
2015-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2897176-A1 |
| titleOfInvention |
Method for manufacturing silicon carbide semiconductor device |
| abstract |
A trench (TR) having a side wall (SW) and a bottom portion (BT) is formed in a silicon carbide substrate (100). A trench insulating film (201A) is formed to cover the bottom portion (BT) and the side wall (SW). A silicon film (201 S) is formed to fill the trench with the trench insulating film (201 A) being interposed therebetween. The silicon film (201 S) is etched so as to leave a portion of the silicon film (201 S) that is disposed on the bottom portion (BT) with the trench insulating film (201A) being interposed therebetween. The trench insulating film (201A) is removed from the side wall (SW). By oxidizing the silicon film (201S), a bottom insulating film is formed. A side wall insulating film is formed on the side wall (SW). |
| priorityDate |
2012-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |