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assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
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classificationCPCInventive |
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classificationIPCInventive |
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filingDate |
2020-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc662a379860c6351ef9fceeda074693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_641271c29858c8ca6f63d5157d045820 |
publicationDate |
2021-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2021043764-A1 |
titleOfInvention |
Structure and Method for FinFET Device with Contact Over Dielectric Gate |
abstract |
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a first active region and a second fin active region extruded from a semiconductor substrate; an isolation featured formed in the semiconductor substrate and being interposed between the first and second fin active regions; a dielectric gate disposed on the isolation feature; a first gate stack disposed on the first fin active region and a second gate stack disposed on the second fin active region; a first source/drain feature formed in the first fin active region and interposed between the first gate stack and the dielectric gate; a second source/drain feature formed in the second fin active region and interposed between the second gate stack and the dielectric gate; a contact feature formed in a first inter-level dielectric material layer and landing on the first and second source/drain features and extending over the dielectric gate. |
priorityDate |
2018-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |