| abstract |
A power semiconductor device having a minimum number of steps, stable characteristics, and high switching speed is realized. A thick gate insulating film and a thinner gate insulating film are formed, a gate electrode material is deposited, and a p-type impurity is ion-implanted into a formation region of a body region under the gate insulating film. Thus, the p-type impurity region 15 is formed. Then, p-type impurities are ion-implanted under the gate insulating films 9 and 11, respectively, to form body regions 19a and 19b. Body region 19a is integrated with p-type impurity region 15. [Selection] Figure 6 |