| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2018-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32fdbef56070f2e95e6462db8cac85cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9adb0f2f26f1ea081dc13590cad05f1 |
| publicationDate |
2019-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2019074370-A1 |
| titleOfInvention |
Semiconductor device primarily made of nitride semiconductor materials and process of forming the same |
| abstract |
A semiconductor device made of primarily nitride semiconductor materials is disclosed. The semiconductor device includes a substrate; a semiconductor stack on the substrate; electrodes of a gate, a source, and a drain each provided on the semiconductor stack, where the gate electrode contains nickel (Ni); a Si compound covering surfaces of the semiconductor stack; an aluminum oxide (Al2O3) film covering the gate electrode exposed from the Si compound; and another Si compound covering the Al2O3 film and the Si compound exposed from the Al2O3 film. A feature of the semiconductor device of the invention is that the Al2O3 film exposes the Si compound at least between the gate electrode and the drain electrode. |
| priorityDate |
2017-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |