| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2002-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f508165a3926f2b658f183cdd1242af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea17bc81347e4a8e4e480c5e7fbc7896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_410b4941088219a64851c84148da9a38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7091d591a60e3d97a3c7f5b25375a26e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa6ed016c42d9ededb94c8d704d71612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a5a7898b59f4c03f220c59ebe6b8e1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2426ed5cdee7a97bae91b02028bc0ea |
| publicationDate |
2003-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6642560-B2 |
| titleOfInvention |
MOSFET with a thin gate insulating film |
| abstract |
A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrata via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (Tox) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or lass than 0.3 mum; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.3 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7282752-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008048250-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010080465-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006007336-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9203478-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010261029-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7352020-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005224898-A1 |
| priorityDate |
1994-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |