Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
filingDate |
2005-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2007-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea17bc81347e4a8e4e480c5e7fbc7896 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a5a7898b59f4c03f220c59ebe6b8e1f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa6ed016c42d9ededb94c8d704d71612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2426ed5cdee7a97bae91b02028bc0ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f508165a3926f2b658f183cdd1242af http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_410b4941088219a64851c84148da9a38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7091d591a60e3d97a3c7f5b25375a26e |
publicationDate |
2007-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7282752-B2 |
titleOfInvention |
MOSFET with a thin gate insulating film |
abstract |
A semiconductor device comprises: a p-type semiconductor substrate ( 1 ); an insulating film ( 3 ); a gate electrode ( 2 ) formed an the substrate via the insulating film; and an n-type source/drain region ( 5 ) formed on both sides of a channel forming region ( 4 ) located under the gate electrode ( 2 ) formed on the substrate ( 1 ). In particular, the thickness (T OX ) of the insulating film ( 3 ) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (L g ) of the gate electrode ( 2 ) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode ( 2 ) and the drain region ( 6 ) is determined a be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film ( 3 ), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008048250-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9203478-B2 |
priorityDate |
1994-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |