http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104867825-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2015-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104867825-B |
| titleOfInvention | The method for assisting forming Y type grid metal medium cavity by photoresist |
| abstract | The present invention is the method for assisting forming Y type grid metal medium cavity by photoresist, includes the following steps: 1) to form covering of the photoresist to Y type grid metal item by photoetching process；2) low-temperature epitaxy SiN medium；3) dielectric openings are carried out to grid metal two ends by photoetching, dielectric etch technique；4) it goes to sacrifice the medium cavity that layer photoresist forms Y type grid；5) growth SiN medium blocks the dielectric openings of grid metal two ends.Advantage: medium cavity is bigger under the grid metal that this method is formed, grid parasitic capacitance reduces more significant, for the sub-micron of Millimeter Wave Applications, two generation of deep-submicron grid length, three generations's semiconductor field device, this method is used to reduce device gate parasitic capacitance with positive effect. |
| priorityDate | 2015-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.