Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7881 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
filingDate |
2013-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cbbd0b2afc067d92bbc02563522ac90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b8783ccaabb14146dd19d1706d330f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba6a266ec388d913480f154aaec27d2c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d583c1cd562aef04e7cc053ccceed5c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a317d459be56f2291f3e030d6a6d02b |
publicationDate |
2013-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2013256779-A1 |
titleOfInvention |
Method of manufacturing semiconductor device and semiconductor device |
abstract |
A method of manufacturing a semiconductor device comprising: forming a first insulating film on a semiconductor substrate; forming an adsorption film on the first insulating film; forming a first film containing germanium on the adsorption film; forming a second insulating film on the first film; forming a floating electrode film on the second insulating film; forming a third insulating film on the floating electrode film; and forming a gate electrode on the third insulating film. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10803945-B2 |
priorityDate |
2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |