| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2014-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b5b8eca4d6155709a7ca76919c21b9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31ac51a6dd55bde39922d66ed84a91dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e9587a92475dd193265ee26ba6b1b95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8842018d32a45c25b0aa5657e206e83e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ea10da0bf1d4d3d712b28ae38b29fd6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad17a53f9778fc14c1d304d5a07dd67b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d83f3d26420c724e3d8150be8e5dab5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85dbf98ccd82e86281c191fa94d10076 |
| publicationDate |
2016-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9478636-B2 |
| titleOfInvention |
Method of forming semiconductor device including source/drain contact having height below gate stack |
| abstract |
Provided is a semiconductor device and methods of forming the same. The semiconductor device includes a substrate having source/drain regions and a channel region between the source/drain regions; a gate structure over the substrate and adjacent to the channel region; source/drain contacts over the source/drain regions and electrically connecting to the source/drain regions; and a contact protection layer over the source/drain contacts. The gate structure includes a gate stack and a spacer. A top surface of the source/drain contacts is lower than a top surface of the spacer, which is substantially co-planar with a top surface of the contact protection layer. The contact protection layer prevents accidental shorts between the gate stack and the source/drain regions when gate vias are formed over the gate stack. Therefore, gate vias may be formed over any portion of the gate stack, even in areas that overlap the channel region from a top view. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312139-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9972541-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10861742-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022253586-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249616-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11349015-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10861950-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10651292-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11569124-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9685368-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910313-B2 |
| priorityDate |
2014-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |