| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
| filingDate |
2016-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f27cd0472813d308f51d664fbe748bc5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71d50a7293caba9c14997027f9784f5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_485cc24d067050c1f2b6daf41b6dd1f8 |
| publicationDate |
2017-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9748403-B2 |
| titleOfInvention |
Semiconductor device and display device including the semiconductor device |
| abstract |
The reliability of a transistor including an oxide semiconductor is improved. The transistor in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region overlapping with the second oxide semiconductor film, a source region and a drain region each in contact with the second insulating film. The channel region includes a first layer and a second layer in contact with a top surface of the first layer and covering a side surface of the first layer in the channel width direction. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11038065-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10559697-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11237444-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11024725-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017025548-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10692994-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189736-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11329166-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11538928-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11271098-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10955950-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388796-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069816-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11682733-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11693288-B2 |
| priorityDate |
2015-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |