abstract |
(57) Abstract: Provided is a thin film transistor including a ZnO film as a semiconductor active layer, which suppresses a leak current of a gate insulating film and obtains good transistor characteristics. A thin film transistor T1 formed on an insulating substrate 1. On the substrate 1, a gate electrode 2, a gate insulating film 31, an intermediate layer 32, and a semiconductor active layer 4 made of ZnO are sequentially formed. On the semiconductor active layer 4, a source electrode 5 and a drain electrode 6 are formed. ing. The mid layer 32 It is provided to prevent mobile ions (Zn ions) from entering the gate insulating film 32 from the semiconductor active layer (ZnO film) 4 and is made of silicon nitride. |