| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_276f771a9246876a7159097019fbe9fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_086084992e3c6fe1e5379c0ccb87ae28 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15 |
| filingDate |
2009-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7296a255dfbd8ae35344902ab5dc953d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7dab1c7d6e49e205d4822e72ff92ddf |
| publicationDate |
2013-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8383470-B2 |
| titleOfInvention |
Thin film transistor (TFT) having a protective layer and manufacturing method thereof |
| abstract |
One of factors that increase the contact resistance at the interface between a first semiconductor layer where a channel is formed and source and drain electrode layers is a film with high electric resistance formed by dust or impurity contamination of a surface of a metal material serving as the source and drain electrode layers. As a solution, a first protective layer and a second protective layer including a second semiconductor having a conductivity that is less than or equal to that of the first semiconductor layer is stacked successively over source and drain electrode layers without exposed to air, the stack of films is used for the source and drain electrode layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9614101-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9536904-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9165955-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9601631-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013105789-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9331310-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9564537-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10084072-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8884302-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9410239-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9818849-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510992-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018205042-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9633710-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013168670-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10241630-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9786690-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9923174-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9972389-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11379231-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9876058-B2 |
| priorityDate |
2008-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |