| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2014-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5a79f4c83d6887d5708274a362a3a58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d74a37b9941416ba91ebb1177d50fbd |
| publicationDate |
2017-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9829533-B2 |
| titleOfInvention |
Semiconductor film and semiconductor device |
| abstract |
An oxide semiconductor film having high stability with respect to light irradiation or a semiconductor device having high stability with respect to light irradiation is provided. One embodiment of the present invention is a semiconductor film including an oxide in which light absorption is observed by a constant photocurrent method (CPM) in a wavelength range of 400 nm to 800 nm, and in which an absorption coefficient of a defect level, which is obtained by removing light absorption due to a band tail from the light absorption, is lower than or equal to 5×10 −2 /cm. Alternatively, a semiconductor device is manufactured using the semiconductor film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016308067-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11195956-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11557680-B2 |
| priorityDate |
2013-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |