Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0297 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0291 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3677 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C19-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136277 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C19-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-36 |
filingDate |
2017-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4d9be286624dc55ccecf0a4f6e26e04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fa2f1cf002f782d6fbf62e9b457795a |
publicationDate |
2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10304555-B2 |
titleOfInvention |
Semiconductor device, driver circuit, and display device |
abstract |
To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with a narrow bezel. A transistor over a substrate; a first conductive film over a surface over which a gate electrode of the transistor is provided; a second conductive film over a surface over which a pair of electrodes of the transistor is provided; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film are included. The second conductive film overlaps the first conductive film with a gate insulating film of the transistor laid between the second conductive film and the first conductive film. |
priorityDate |
2013-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |