| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-42388 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2016-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2627974b94ebbe182a376fa15d81bafd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0c9203dec70d7cfafab390869b80d61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86278739d78f82e4e8019458d88aea98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d0bf63f024929a0f7e925d4edfed33e |
| publicationDate |
2018-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9887295-B2 |
| titleOfInvention |
Thin film transistor with multiple oxide semiconductor layers |
| abstract |
A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current in an off state (in a non-conductive state) is provided. A semiconductor device including such a transistor is provided. A first electrode is formed over a substrate, a first insulating layer is formed adjacent to a side surface of the first electrode, and a second insulating layer is formed to cover the first insulating layer and be in contact with at least part of a surface of the first electrode. The surface of the first electrode is formed of a conductive material that does not easily transmit an impurity element. The second insulating layer is formed of an insulating material that does not easily transmit an impurity element. An oxide semiconductor layer is formed over the first electrode with a third insulating layer provided therebetween. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004961-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11295402-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11475422-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11757007-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017170332-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11289475-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10714633-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10862960-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10498808-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031403-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11764309-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11670705-B2 |
| priorityDate |
2013-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |